2011. 1. 26 1/6 semiconductor technical data KF5N60D/i n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features h v dss = 600v, i d = 3.5a h drain-source on resistance : r ds(on) =2.0 ? (max) @v gs = 10v h qg(typ) = 11nc maximum rating (tc=25 ? ) characteristic symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 3.5 a @t c =100 ? 2.2 pulsed (note1) i dp 13 single pulsed avalanche energy (note 2) e as 140 mj repetitive avalanche energy (note 1) e ar 3.5 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 59.5 w derate above 25 ? 0.48 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 2.1 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w g d s pin connection 1. gate 2. drain 3. source dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j ipak(1) 123 a a b b c c d d e e f ff g g h h j j l l 0.96 max k m p m n p n k 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. gate 2. drain 3. source KF5N60D kf5n60i
2011. 1. 26 2/6 KF5N60D/i revision no : 0 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l=12.7mh, i s =4.5a, v dd =50v, r g =25 ? , starting t j =25 ? . note 3) i s ? 4.5a, di/dt ? 100a/ k , v dd ? bv dss , starting t j =25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. 2 product name lot no 1 001 2 kf5n60 d 1 2 1 001 kf5n60 i marking characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.61 - v/ ? drain cut-off current i dss v ds =600v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =1.75a - 1.7 2.0 ? dynamic total gate charge q g v ds =480v, i d =4.5a v gs =10v (note4,5) - 11 - nc gate-source charge q gs - 2.8 - gate-drain charge q gd - 45 - turn-on delay time t d(on) v dd =300v i d =4.5a r g =25 ? (note4,5) - 15 - ns turn-on rise time t r - 16 - turn-off delay time t d(off) - 30 - turn-off fall time t f - 15 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 520 - pf output capacitance c oss - 60 - reverse transfer capacitance c rss - 5.5 - source-drain diode ratings continuous source current i s v gs 2011. 1. 26 3/6 KF5N60D/i revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 6.0 2.0 0 1.0 3.0 5.0 4.0 08 412 6 210 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 2.5a v gs = 0v i ds = 250 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v v gs =7v v gs =10v v gs =6v v ds =30v 25 c t c =100 c t c =100 c v gs =5v
2011. 1. 26 4/6 KF5N60D/i revision no : 0 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) 0 12 10 6 2 4 8 14 16 6 2 10 8 12 4 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 1 10 2 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 0 3 1 2 6 5 4 75 150 125 50 100 025 drain current i d (a) i d =4.5a c junction temperature t j ( ) fig10. i d - t j t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 1 10 100 1000 0 5 15 25 35 10 20 30 40 c rss c oss c iss dc 10ms 1ms 100 s operation in this area is limited by r ds(on) v ds = 480v 10 s time (sec) fig11. transient thermal response curve transient thermal resistance 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm sin gle pulse dut y =0.5 0. 0 2 0.0 5 0. 1 0.2 0.01
2011. 1. 26 5/6 KF5N60D/i revision no : 0 fig12. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2011. 1. 26 6/6 KF5N60D/i revision no : 0 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss
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